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The Effect of Hydrogen on the Molecular-Beam-Epitaxy Growth of GaN on Sapphire Under Ga-Rich Conditions

Published online by Cambridge University Press:  10 February 2011

S. L. Buczkowski ,
Zhonghai Yu ,
M. Richards-Babb ,
N. C. Giles ,
L. T. Romano  and
T. H. Myers
S. L. Buczkowski
Affiliation:
Physics Department,
Zhonghai Yu
Affiliation:
Physics Department,
M. Richards-Babb
Affiliation:
Chemistry Department, West Virginia University, Morgantown, WV 26506;
N. C. Giles
Affiliation:
Physics Department,
L. T. Romano
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304; tmyers@wvu.edu
T. H. Myers
Affiliation:
Physics Department,
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Abstract

Nucleation and growth of GaN under Ga-rich conditions by molecular beam epitaxy using a nitrogen rf plasma source is shown to result in both a smoother GaN surface and a reduced inversion domain content. In addition, preliminary results of the dramatic effect of atomic hydrogen on growth kinetics for Ga-rich growth are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 197
Copyright
Copyright © Materials Research Society 1997

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References

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