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The Effect of Growth Ambients on the Local Atomic Structure of Thermally Grown Silicon Dioxide Thin Films

Published online by Cambridge University Press:  22 February 2011

J. T. Fitch  and
G. Lucovsky
J. T. Fitch
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
G. Lucovsky
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
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Abstract

This paper represents a study of the local atomic structure of SiO2 films formed by thermal oxidation in dry oxygen, pyrolytic steam, and a variety of different sequences of these ambients. All oxidations were carried out at 850 °C. Local atomic structure was studied via infrared spectroscopy (IR). The growth ambient dependence of the frequency v, and half-width Δv, of the bond stretching feature, and the refractive index, n, was investigated. Consistent with previous work [1,2] it was found that.when the majority of the sample thickness was grown in steam the oxides were generally less dense than dry oxides. Also, the last ambient in a sequential oxidation process was found to have the most influence on the oxide properties. The observed variations in v, Δv, and n could be readily explained in terms of systematic changes in the bond angle at the oxygen bonding site between corner connected tetrahedra.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 105: Symposium F – SiO2 and Its Interfaces , 1987 , 151
Copyright
Copyright © Materials Research Society 1988

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References

1. Fitch, J.T. and Lucovsky, G., Proc. MRS, Vol.92, Rapid Thermal Processing of Electronic Materials, p. 89.Google Scholar
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