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The Effect of Film Thickness and Pulse Duration Variation in Excimer Laser Crystallization of Thin Si Films

Published online by Cambridge University Press:  15 February 2011

J. P. Leonard ,
M. A. Bessette ,
V. V. Gupta  and
James S. Im
J. P. Leonard
Affiliation:
Department of Chemical Engineering, Materials Science, and Mining Engineering, Columbia University, New York, NY 10027
M. A. Bessette
Affiliation:
Department of Chemical Engineering, Materials Science, and Mining Engineering, Columbia University, New York, NY 10027
V. V. Gupta
Affiliation:
Department of Chemical Engineering, Materials Science, and Mining Engineering, Columbia University, New York, NY 10027
James S. Im
Affiliation:
Department of Chemical Engineering, Materials Science, and Mining Engineering, Columbia University, New York, NY 10027
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Abstract

Recognizing that the processing window in conventional excimer laser crystallization corresponds mainly to the partial melting regime, and that this can be properly simulated using a one-dimensional model, we investigate numerically the melting and solidification of thin silicon films on SiO2. Here a portion of the silicon film is melted and subsequent vertical solidification is initiated from the lower interface bounding the unmelted region. Upper and lower energy density limits for this regime are calculated for crystal silicon films of thickness 10 to 300 nm, and for pulse duration ranging from 10 to 200 ns. These calculations show that increasing pulse duration requires proportionally more incident energy density to partially melt the film, while decreasing film thickness reduces the range of energy densities over which partial melting can occur. The results are explained in terms of characteristic thermal diffusion distances and the enthalpy change associated with melting. In view of the results we discuss optimization of the conventional excimer laser crystallization and the avoidance of complete melting during the process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 947
Copyright
Copyright © Materials Research Society 1997

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References

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