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Effect of Excimer Laser Fluence Gradient on Lateral Grain Growth in Crystallization of a-Si Thin Films

Published online by Cambridge University Press:  14 March 2011

Minghong Lee ,
Seungjae Moon ,
Mutsuko Hatano ,
Kenkichi Suzuki  and
Costas P. Grigoropoulos
Minghong Lee
Affiliation:
Department of Mechanical Engineering, University of California, Berkeley, CA 94720-1740, U.S.A.
Seungjae Moon
Affiliation:
Department of Mechanical Engineering, University of California, Berkeley, CA 94720-1740, U.S.A.
Mutsuko Hatano
Affiliation:
Hitachi Laboratory, Hitachi Ltd., Tokyo 185-8601, JAPAN
Kenkichi Suzuki
Affiliation:
Electron Tube & Devices Division, Hitachi Ltd., Mobara 297, JAPAN
Costas P. Grigoropoulos
Affiliation:
Department of Mechanical Engineering, University of California, Berkeley, CA 94720-1740, U.S.A.
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Abstract

In order to clarify the relationship between excimer laser fluence gradient and the length of lateral grain growth, the laser fluence is modulated by a beam mask. The fluence distribution is measured by using a negative UV photoresist. The lateral growth length and the grain directionality are improved with increasing fluence gradient. Lateral growth length of about 1.5 [.proportional]m is achieved by using a single laser pulse without substrate heating on a 50 nm-thick a-Si film by enforcing high fluence gradient. Electrical conductance measurement is used to probe the solidification dynamics. The lateral solidification velocity is found to be about 7 m/s.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 621: Symposia Q/R – Electron-Emissive Materials, Vacuum Microelectronics… , 2000 , Q7.6.1
Copyright
Copyright © Materials Research Society 2000

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References

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