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Effect of Electric Fields in Coupled Double Quantum Wells

Published online by Cambridge University Press:  26 February 2011

Y. J. Chen ,
Emil S. Koteles ,
B. Elman  and
C. A. Armiento
Y. J. Chen
Affiliation:
GTE Laboratories Incorporated 40 Sylvan Road Waltham, MA 02254
Emil S. Koteles
Affiliation:
GTE Laboratories Incorporated 40 Sylvan Road Waltham, MA 02254
B. Elman
Affiliation:
GTE Laboratories Incorporated 40 Sylvan Road Waltham, MA 02254
C. A. Armiento
Affiliation:
GTE Laboratories Incorporated 40 Sylvan Road Waltham, MA 02254
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Abstract

We present a detailed experimental study of the influence of electric fields on exciton states in a GaAs/AlGaAs coupled double quantum well structure and discuss the advantages of using this novel structure. The coupling of electronic states in the two quantum wells, due to the narrowness of the barrier between them, leads to an enhancement of the quantum-confined Stark effect (by as much as five times that of the single quantum well case). From the measured energies of the exciton transitions, splittings of the levels in a coupled double quantum well structure were derived without recourse to a theoretical model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 571
Copyright
Copyright © Materials Research Society 1988

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Footnotes

*

present address: Department of Electrical Engineering University of Maryland Baltimore, MD

References

REFERENCES

1.Miller, D.A.B., Chemla, D.S., Damen, T.C., Gossard, A.C., Wiegmann, W., Wood, T.H. and Burrus, C.A., Phys. Rev. Lett. 53, 2173 (1984).Google Scholar
2.Miller, D.A.B., Chemla, D.S., Damen, T.C., Gossard, A.C., Wiegmann, W., Wood, T.H. and Burrus, C.A., Phys. Rev. B 32, 1043 (1985).Google Scholar
3.Sander, G.D. and Bajaj, K.K., Phys. Rev. B 35, 2308 (1987) and references therein.Google Scholar
4.Miller, D.A.B., Weiner, J.S. and Chemla, D.S., IEEE J. of Quantum Electron. QE–22, 1816 (1986), and earlier references on device applications therein.Google Scholar
5.Chemla, D.S., Miller, D.A.B., Smith, P.W., Gossard, A.C., and Wiegmann, W., IEEE J of Quantumn Electron. QE–20, 265 (1984).Google Scholar
6.Bastard, G., Mendez, E.E., Chang, L.L., and Esaki, L., Phys. Rev. B 28, 3241 (1983).Google Scholar
7.Kawai, H., Kaneko, J. and Watanabe, N., J. Appl. Phys. 58, 1263 (1985).Google Scholar
8.Austin, E.J. and Jaros, M., J. Phys. C, 19, 533 (1986).Google Scholar
9.Yariv, A., Lindsey, C. and Sivan, U., J. Appl. Phys. 58, 3669 (1985).Google Scholar
10.Le, H.Q., Zayhowski, J.J., Goodhue, W.D. and Bales, J., in Proceedings of 13th International Symposium on GaAs and Related Compounds, Las Vegas 1986, edited by Lindley, W.T. (Techno House, London, 1987), p.319.Google Scholar
11.Islam, M.N., Hillman, R.L., Miller, D.A.B. and Chemla, D.S., Appl. Phys. Lett. 50, 1098 (1987).Google Scholar
12.Chen, Y.J., Koteles, E.S., Elman, B.S., and Armiento, C.A., Phys. Rev. B 36, 4562 (1987).Google Scholar
13Chuang, S.L. and Do, B., J. Appl. Phys. 62, 1290 (1987).Google Scholar
14.Le, H.Q., Zayhowski, J.J. and Goodhue, W.D., Appl. Phys. Lett. 50, 1518 (1987).Google Scholar