Hostname: page-component-848d4c4894-mwx4w Total loading time: 0 Render date: 2024-06-22T11:29:44.072Z Has data issue: false hasContentIssue false

Effect of CU and SI in Aluminum on Stress Change and on TiAl3 Formation in Al Alloy/TI Bilayer Films During Annealing

Published online by Cambridge University Press:  21 February 2011

Dirk D. Brown
Affiliation:
Advanced Process Development, Advanced Micro Devices, Sunnyvale, CA 94088 Cornell University, Department of Materials Science and Engineering, Ithaca, NY 14850
Paul R. Besser
Affiliation:
Advanced Process Development, Advanced Micro Devices, Sunnyvale, CA 94088
John E. Sanchez Jr.
Affiliation:
Advanced Process Development, Advanced Micro Devices, Sunnyvale, CA 94088
Matt A. Korhonen
Affiliation:
Cornell University, Department of Materials Science and Engineering, Ithaca, NY 14850
Che-Yu Li
Affiliation:
Cornell University, Department of Materials Science and Engineering, Ithaca, NY 14850
Get access

Abstract

Interconnect metallizations used in advanced integrated circuits typically use an Al-alloy sputterdeposited onto a Ti barrier layer. The Ti and Al react above ∼ 400°C to form TiAl3, which affects the stress evolution of the metal stack during thermal cycling. This paper describes results of thin film experiments performed on Ti/Al-alloy bilayer films. Two Al alloys were studied: Al-I%Cu and Al-0.5%Cu-1%Si. The rate of TiAl3 formation at 430°C was determined for both alloys and used to relate TiAl3 formation to the stress evolution of the film stacks during thermal cycling. The dominant effect of the TiAl3 intermetallic formation on stress arises from a change in the stress-temperature behavior of the film stack, due to a change in the yield behavior, effective modulus, and thermal expansion coefficient of the stack. The presence of Si in the Al-alloy markedly reduces both the rate of TiAl3 formation and the resulting change in composite stress.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Tracy, D.P., Knorr, D.B., Rodbell, K.P., J. Appl. Phys. 76(5), 2671 (1994).Google Scholar
2. Colgan, E.G., Mat. Sci. Rep. 5, 3 (1990).Google Scholar
3. Flinn, P.A., Gardner, D.S., and Nix, W.D., IEEE Trans. Electron. Dev. ED–34, 689 (1987).Google Scholar
4. Besser, P.R., Sanchez, J.E. Jr and Alvis, R.A., MRS Symp. Proc. Vol. 355 (1995).Google Scholar
5. Knorr, D.B., Rensselaer Polytechnic Institute, Private Communication.Google Scholar
6. Tardy, J. and Tu, K.N., Phys. Rev. B 32(4), 2070 (1985).Google Scholar
7. Nix, W.D., Met. Trans. 20A, 2217 (1989)Google Scholar
8. Turner, C.D., Powers, W.O., and Wert, J.A., Acta. Met. 37, 2635 (1989).Google Scholar
9. Mondolfo, L.F., Aluminum Alloys: Structure and Properties (Butterworths, London, 1976).Google Scholar
10. Handbook of Chemistry and Physics, 66m Edition, Weast, R.W. ed. (CRC Press, 1986).Google Scholar
11. Smith, W.F., Principals of Materials Science and Engineering (McGraw-Hill, 1986).Google Scholar