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Effect of Arsenic on Extended Defect Evolution in Silicon

Published online by Cambridge University Press:  21 March 2011

R. Brindos ,
K. S. Jones  and
M. E. Law
R. Brindos
Affiliation:
SWAMP Center, Univ. of Florida, Gainesville, FL 32611
K. S. Jones
Affiliation:
SWAMP Center, Univ. of Florida, Gainesville, FL 32611
M. E. Law
Affiliation:
SWAMP Center, Univ. of Florida, Gainesville, FL 32611
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Abstract

The effect of arsenic on {311} defect formation was determined for temperatures ranging from 700°C to 800°C. Arsenic well structures were formed at arsenic concentrations of 3×1017, 3×1018, and 3×1019 cm−3. A 40 keV 1×1014 cm−2 silicon implant, that is known to form {311} defects, was then incorporated into the structures. Extended defect evolution and dissolution was then studied after furnace annealing at 700°C, 750°C and 800°C for various times. It was determined that arsenic has a strong affect on the nucleation of extended defects. However, once the defects were formed, the dissolution time constant was the same for all concentrations considered. The activation energy for defect dissolution was found to be 3.4eV and was also independent of arsenic concentration. Using a newly developed {311} model in the FLOOPS process simulation software, the effect of the arsenic on {311} formation and dissolution was simulated. It was found that by using a pair model with an arsenic-interstitial binding energy of 0.95eV, the experimental results were able to be simulated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 669: Symposium J – Si Front-End Processing–Physics and Technology of Dopant-Defect Interactions III , 2001 , J5.2
Copyright
Copyright © Materials Research Society 2001

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References

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