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Effeci of Stresses on Void Nucleation During Electromigration

Published online by Cambridge University Press:  22 February 2011

F. R. Brotzen ,
C. T. Rosenmayer ,
C. F. Dunn  and
J. W. McPherson
F. R. Brotzen
Affiliation:
Rice University, Department of Materials Science, Houston, TX 77251–1892
C. T. Rosenmayer
Affiliation:
IBM, Austin, Tx 78758
C. F. Dunn
Affiliation:
Texas Instruments, Inc., Dallas Tx 75265–655012
J. W. McPherson
Affiliation:
Texas Instruments, Inc., Dallas Tx 75265–655012
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Abstract

Based on experimental findings obtained earlier by the authors [1], a model is devised in which the divergence of the vacancy flow created in the grain boundaries of Al-Si(1%) metallizations by high-density DC is attributed to temperature gradients and structural features. Void nuclei of critical size are created in areas of high vacancy concentration. These nuclei grow, fed by the electromigrational vacancy current. It is shown that stresses have only a negligible' effect on the vacancy diffusion but influence the nucleation process dramatically. Results expressed in terms of fraction of void area are calculated and then correlated with experimental results. Certain material parameters, whose values are not known, are derived from the experimental data. The physical significance of these parameters is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 239: Symposium D – Thin Films: Stresses and Mechanical Properties III , 1991 , 689
Copyright
Copyright © Materials Research Society 1992

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References

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