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ECR Plasma Deposition of Dielectrics for Optoelectronic Applications

Published online by Cambridge University Press:  21 February 2011

Steven Dzioba
Steven Dzioba*
Affiliation:
Bell-Northern Research Ltd. Ottawa, Ontario, K1Y 4H7, CANADA
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Extract

A UHV electron cyclotron resonance (ECR) plasma source has been used to deposit SiNx, SiOxNy and amorphous Si thin films on InP substrates for optoelectronic device applications. High quality dielectric films can be deposited at temperatures significantly lower than conventional techniques, namely less than 110°C. Selected applications pertinent to optoelectronic devices are used to establish the role of ion/electron fluxes in thin film properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 165 , 1989 , 91
Copyright
Copyright © Materials Research Society 1990

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References

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