Hostname: page-component-84b7d79bbc-g78kv Total loading time: 0 Render date: 2024-07-28T03:31:22.520Z Has data issue: false hasContentIssue false
  • English
  • Français

ECR Hydrogen Plasma Treatment of Si: Defect Activation Under Thermal Anneal

Published online by Cambridge University Press:  26 February 2011

C. W. Nam  and
S. Ashok
C. W. Nam
Affiliation:
Dept. of Elec. Engg., University of Ulsan, South Korea
S. Ashok
Affiliation:
Departments of Electrical Engineering & Engineering Science, Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, PA 16802, USA
Get access

Abstract

Si wafers subject to short-time (4–12 min.), low-temperature atomic hydrogen cleaning in an electron cyclotron resonance (ESR) plasma system have been annealed subsequently in the temperature range 300–750 °C for 20 mins. While only a small broad peak is seen immediately after hydrogenation, several pronounced and distinct majority carrier trap levels show up in deep level transient spectroscopy (DLTS) measurements of subsequently fabricated Schottky diodes on samples annealed at 450 °C and above. The concentrations of these deep levels reach a maximum at anneal temperatures around 500 °C and drop substantially beyond 750 °C. This phenomenon appears to be unrelated to the presence of oxygen in Si and is of potential importance in silicon processing technology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 365
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Adachi, N., Nishikawa, H., Komatsu, Y., Hourai, H., Sano, M. and Shigematsu, T., in Defect Engineering in Semiconductor Growth, Processing and Device Technology, edited by Ashok, S., Chevallier, J., Sumino, K. and Weber, E. (Mater. Res. Soc. Proc. 262, Pittsburgh, 1992), p. 815.Google Scholar
2. Kar, S. and Ashok, S., J. Appl. Phys. 73, 2187 (1993).Google Scholar
3. Mizuno, B., Kubota, M., Nomura, N. and Yamamoto, M., J. Appl. Phys. 62, 2566 (1987).Google Scholar
4. Johnson, N.M., Doland, C., Ponce, F., Walker, J. and Anderson, G., Physica B 170, 3 (1991).Google Scholar
5. Stein, H.J. and Hahn, S. , Appl. Phys. Lett. 56, 63 (1990).Google Scholar
6. Murray, R., Brown, A.R. and Newman, R.C., Materials Science and Engineering B4, 299 (1989).Google Scholar
7. Nam, C.W., Ashok, S., Tsai, W. and Day, M.E., J. Vac. Sci. Technol. B 5, 3010 (1994).Google Scholar
8. Hwang, J.M., Schroder, D.K. and Biter, W.J., J. Appl. Phys. 57, 5275 (1985).Google Scholar
9. Pearton, S.J., Chantre, A.M., Kimmerling, L.C., Cummings, K.D. and Dautremont-Smith, W.C. in Oxygen, Carbon, Hydrogen and Nitrogen in Silicon, Edited by Mikkelson, J.C. Jr. et al Mat. Res. Soc. Proc. 59 , Pittsburgh, 1986) p. 475.Google Scholar
10. Murray, R., Physica B 170, 115 (1991).Google Scholar
11. Newman, R.C., Tipping, A.K. and Tucker, J.H., J. Phys. C 18, L 861 (1985).Google Scholar