Hostname: page-component-848d4c4894-wg55d Total loading time: 0 Render date: 2024-05-09T17:57:29.621Z Has data issue: false hasContentIssue false
  • English
  • Français

Ebic Analysis of Gettering at Si-Si (Ge) Heteroepitaxial Misfit Dislocations as a Function of Impurity Decoration

Published online by Cambridge University Press:  03 September 2012

H. R. Kirk ,
Z. J. Radzimski ,
E. A. Fitzgerald  and
G. A. Rozgonyi
H. R. Kirk
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh North Carolina, 27695
Z. J. Radzimski
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh North Carolina, 27695
E. A. Fitzgerald
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh North Carolina, 27695
G. A. Rozgonyi
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh North Carolina, 27695
Get access

Abstract

An EBIC analysis is made of decorated heteroepitaxial misfit dislocations formed at the interface of Si-Si (Ge) epitaxial layers grown in a CVD reactor on Si substrates. The electrical activity of the dislocations is studied after decorating the dislocations with Ni and Au impurities introduced by ion-implantation and backside deposited metallic thin films. The impurities are activated by RTA annealing at 400, 800 and 1000°C. A model is presented for the formation of NiSi2 precipitates on misfit dislocations which suggests that the nucleation and growth of NiSi2 precipitates is a function of the cleanliness of the as-grown dislocations. It is concluded that the distribution of electrical activity of impurity decorated misfit dislocations is a strong function of the impurity type, condition of the as-grown material, and concentration of metallic impurities introduced during the process of decoration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 609
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Lee, D. M., Posthill, J. B., Shimura, F., and Rozgonyi, G. A., Appl. Phys. Lett. 53, (5), 370 (1988)CrossRefGoogle Scholar
2. Radzimski, Z. J., Zhou, T. Q., Buczkowski, T. Q. and Rozgonyi, G. A., Appl. Phys. a 53, (1991)Google Scholar
3. Salih, A. S. M., Bean, K. E., Ryu, J. S., and Rozgonyi, G. A., J. Electrochem. Soc. 133, no. 3 475 (1985)Google Scholar
4. Teichler, H., Inst. Phys. Conf. Ser. 104, 57 (1989)Google Scholar
5. Heggie, M. I., Jones, R., Lister, G. M. S. and Umerski, A., Inst. Phys. Conf. Ser no. 104, 43 (1989)Google Scholar
6. Zhou, T. Q., Buczkowski, A. B., Radzimski, Z. J. and Rozgonyi, G. A., Mat. Res. Soc. Symp. Proc. 224, 55 (1991)CrossRefGoogle Scholar