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Dynamic Response of the Electro-Optic Effect in Epitaxial Ferroelectric Thin Films

Published online by Cambridge University Press:  10 February 2011

B. H. Hoerman ,
J. C. Majewski ,
B. M. Nichols ,
A. Teren  and
B. W. Wessels
B. H. Hoerman
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208
J. C. Majewski
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208
B. M. Nichols
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208
A. Teren
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208
B. W. Wessels
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208
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Abstract

The dynamic response of the electro-optic coefficients and the electronic polarizability for epitaxial thin films of KnbO3 and BaTiO3 are measured. For these two systems a logarithmic dependence of the electro-optic response and the polarization on time was observed after removal of an applied electric field. The dynamic response of the electro-optic effect and the polarization of the films are attributed to the same physical mechanism, which we associate with the dynamic response of ferroelectric nanodomains.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 597: Symposium PP – Thin Films for Optical Waveguide Devices & Materials … , 1999 , 157
Copyright
Copyright © Materials Research Society 2000

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References

1 Kim, D. H. and Kwok, H. S., Appl. Phys. Lett. 67, 1803(1995).Google Scholar
2 Nystrom, M. J. and Wessels, B. W., Mat. Res. Soc. Symp. Proc. 453, 259(1997).Google Scholar
3 Graettinger, T. M., Rou, S. H., Ameen, M. S., Auciello, O. and Kingon, A. I., Appl. Phys. Lett. 58, 1964 (1991).Google Scholar
4 Gill, D. M., Conrad, C. W., Ford, G., Wessels, B. W. and Ho, S. T., Appl. Phys. Lett. 71, 1783 (1997).Google Scholar
5 Nystrom, M. J., Wessels, B. W., Studebaker, D. B., Marks, T. J., Lin, W. P. and Wong, G. K., Appl. Phys. Lett. 67, 365(1995).Google Scholar
6 Hoerman, B. H., Nichols, B. M., Nystrom, M. J. and Wessels, B. W., Appl. Phys. Lett. 75, 2707 (1999).Google Scholar
7 Zgonik, M., Schlesser, R., Biaggio, I., Volt, E., Tscherry, J. and Gunter, P., J. Appl. Phys. 74, 1287 (1993).Google Scholar
8 Guilbert, L., Salvestrini, J. P., Fontana, M. D. and Czapla, Z., Phys. Rev. B 58, 2523(1998).Google Scholar
9 Hubert, C. and Levy, J., Review of Scientific Instruments 70, 3684(1999).Google Scholar
10 Venkatraman, G. and Rishi, R., J. Appl. Phys. 81, 865(1997).Google Scholar
11 Nystrom, M. J., Wessels, B. W., Chen, J. and Marks, T. J., Appl. Phys. Lett. 68, 761(1996).Google Scholar