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Dynamic Crack Propagation in Single-Crystalline Silicon

Published online by Cambridge University Press:  15 February 2011

T. Cramer ,
A. Wanner  and
P. Gumbsch
T. Cramer
Affiliation:
Max-Planck-Institut für Metallforschung, Seestr. 92, 70174 Stuttgart, Germany
A. Wanner
Affiliation:
Institut für Metallkunde, Univ. Stuttgart, Seestr. 71, 70174 Stuttgart, Germany
P. Gumbsch
Affiliation:
Max-Planck-Institut für Metallforschung, Seestr. 92, 70174 Stuttgart, Germany
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Abstract

Tensile tests on notched plates of single-crystalline silicon were carried out at high overloads. Cracks were forced to propagate on {110} planes in a <110> direction. The dynamics of the fracture process was measured using the potential drop technique and correlated with the fracture surface morphology. Crack propagation velocity did not exceed a terminal velocity of v = 3800 m/s, which corresponds to 83%7 of the Rayleigh wave velocity vR. Specimens fractured at low stresses exhibited crystallographic cleavage whereas a transition from mirror-like smooth regions to rougher hackle zones was observed in case of the specimens fractured at high stresses. Inspection of the mirror zone at high magnification revealed a deviation of the {110} plane onto {111} crystallographic facets.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 539: Symposium M – Fracture & Ductile vs. Brittle Behavior - Theory, Modelling… , 1998 , 181
Copyright
Copyright © Materials Research Society 1999

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