Hostname: page-component-77c89778f8-vsgnj Total loading time: 0 Render date: 2024-07-17T05:47:43.098Z Has data issue: false hasContentIssue false
  • English
  • Français

DX-Like Centers in IV-VI.

Published online by Cambridge University Press:  26 February 2011

Dmitriy R. Khokhlov
Dmitriy R. Khokhlov*
Affiliation:
Physics Department, Moscow State University, Moscow 119899, Russia
Get access

Abstract

Up to the recent times it was believed that observation of the DX-centers is restricted to the rather wide-bandgap III-V and II-VI semiconductors. However it becomes obvious now that some of the narrow-gap IV-VI semiconductors doped with the group III elements reveal the features of DX-centers. A range of features, such as negative-U behavior, large lattice relaxation, metastability of the local excited states, narrow bandgap - make the effects resulting from the DX-like behavior much more complicated than in the “classical” materials with the DX-centers. We review the most unusual recent results obtained in the field that originate from the specifics of the DX-like centers in IV-VI.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 947
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Mooney, P.M., J. Appl. Phys., 67, Rl (1990).Google Scholar
2. Chadi, D.J. and Chang, K.J., Phys. Rev. Letters 61, 7 (1988).Google Scholar
3. Akimov, B.A., Dmitriev, A.V., Khokhlov, D.R. and Ryabova, L.I., Phys. Stat. Sol. (a) 137, 9 (1993)Google Scholar
4. Akimov, B.A., Ryabova, L.I., Yatsenko, O.B. and Chudinov, S.M., Fiz. Tekh. Poluprovodn. 13, 752 (1979) [Sov. Phys. Semicond. 13, 441 (1979)].Google Scholar
5. Akimov, B.A., Nikorich, A.V., Khokhlov, D.R. and Chesnokov, S.N., Fiz. Tekh. Poluprovodn. 23, 668 (1989) [Sov. Phys. Semicond. 23,418 (1989)].Google Scholar
6. Akimov, B.A., Brandt, N.B., Gas’kov, A.M., Zlomanov, V.P., Ryabova, L.I. and Khokhlov, D.R., Fiz. Tekh. Poluprovodn. 17, 87 (1983) [Sov. Phys. Semicond. 17, 53 (1983)].Google Scholar
7. Akimov, B.A., Belokon, S.A.’, Dashevskiy, Z.M., Egorov, K.N., Lakeenkov, V.M., Nikorich, A.V., and Ryabova, L.I., Fiz. Tekh. Poluprovodn. 25, 250 (1991).Google Scholar
8. Akimov, B.A., Albul, A.V., Ivanchik, I.I., Ryabova, L.I., Slyn’ko, E.I. and Khokhlov, D.R., Fiz. Tekh. Poluprovodn. 27, 351 (1993).Google Scholar
9. Belogorokhov, A.I., Ivanchik, I.I. and Khokhlov, D.R., Proceedings SPUE 1575, 3476 (1991).Google Scholar
10. Akimov, B.A. and Khokhlov, D.R., Semicond. Sci. Technol. 8, S349 (1993).Google Scholar
11. Chesnokov, S.N., Dolzhenko, D.E., Ivanchik, I.I. and Khokhlov, D.R., Infrared Phys. 35, 23 (1994).Google Scholar
12. Zasavitskiy, I.I., Matveenko, A. V., Matsonashvili, B.N. and Trofimov, V.T., Fiz. Tekh. Poluprovodn. 20, 214 (1986) [Sov. Phys. Semicond. 20, 135 (1986)].Google Scholar
13. Akimov, B.A., Brandt, N.B., Khokhlov, D.R. and Chesnokov, S.N., Pis’ma v Zh. Tekh. Fiz. 14, 731 (1988) [Sov. Tech. Phys. Lett. 14, 325 (1988)].Google Scholar
14. Dolzhenko, D.E., Ivanchik, I.I., Nikorich, A.V., Khokhlov, D.R. and Chesnokov, S.N., Pis’ma v Zh. Eksp. Teor. Fiz. 55, 125 (1992) [Sov. Phys. - JETP Lett. 55, 119 (1992)].Google Scholar