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DX Centers in AlGaAs and Pressurised GaAs

Published online by Cambridge University Press:  22 February 2011

S. Anand ,
S. Subramanian ,
B. M. Arora ,
Y. C. Lu  and
E. Bauser
S. Anand
Affiliation:
Tata Institute of Fundamental Research, Bombay, India
S. Subramanian
Affiliation:
Tata Institute of Fundamental Research, Bombay, India
B. M. Arora
Affiliation:
Tata Institute of Fundamental Research, Bombay, India
Y. C. Lu
Affiliation:
Max Planck Institut fur Festkorperschung, Stuttgart, Germany
E. Bauser
Affiliation:
Max Planck Institut fur Festkorperschung, Stuttgart, Germany
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Abstract

In this paper, we present results of our investigations on some aspects of the DX centers. It is shown from the low temperature Hall mobility measurements that the charge state of the DX center is neutral supporting the positive U model for the DX center. Hall and DLTS measurements on Al-rich Al0.8Ga0.2As:Te sample show a reversal in the ordering of the energies of the hydrogenic and deep states of the Te donor, with the DX state lying higher than the X valley related effective mass state. Thermal emission properties of the pressure induced DX states of Ge and Se donors in neutron transmutation doped (NTD) GaAs are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 489
Copyright
Copyright © Materials Research Society 1993

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References

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