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Ductility Response of Ni3Al-Zr-B Base Alloys with Ternary Elements to Strain Rate and High Temperature

Published online by Cambridge University Press:  15 February 2011

Yinmin Wang ,
Dongliang Lin ,
T. L. Lin  and
Yun Zhang
Yinmin Wang
Affiliation:
Department of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200030, China
Dongliang Lin
Affiliation:
Department of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200030, China
T. L. Lin
Affiliation:
Department of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200030, China
Yun Zhang
Affiliation:
Department of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200030, China
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Abstract

The compressive ductilities of Ni3Al-Zr-B base alloys with sole addition of magnesium (0.02∼0.06wt.%) and combined addition of magnesium(0.02wt.%) and silicon(0.54∼1.08wt.%) respectively responding to strain rate rising from 10-4sec-1 to 10-1 sec-1 have been studied in a high temperature range of 1073∼1273K. The results show that the compressive strains at rupture(CSR) of the alloys have been greatly improved by sole addition of magnesium and the alloys with combined addition of magnesium and silicon reveal even higher CSR values, furthermore, at temperatures of 1073K and 1273K, the strain rate dependence of CSR reveals to be anomalous, i.e, the CSR value increases as the strain rate rises, and then declines until it surpasses the peak value, which is corresponded to the strain rate of 10-3 sec-1 and 10-3 sec-1 respectively.

The beneficial effect of magnesium and silicon exists in their competence of reducing strain rate sensitivity exponent values. The mechanisms of the anomalous ductilizing behavior in the Ni3Al as affected by ternary elements are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 460: Symposium Z – High-Temperature Ordered Intermetallic Alloys VII , 1996 , 511
Copyright
Copyright © Materials Research Society 1997

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References

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