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Dual Electron Beam Processing System for Semiconductor Materials
Published online by Cambridge University Press: 15 February 2011
Abstract
This paper describes a semiconductor processing system using two electron beams. One beam provides uniform heating of the bulk of the specimen, whilst the other performs localized heating, for example as a spot, a line beam, or as an inset scan. The annealing of localized regions in ion-implanted silicon and SOS, by local heating above the bulk temperature, illustrates the application of the system. Other applications of the systems are also considered.
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- Copyright © Materials Research Society 1982
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