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Dry Etching of InGaP and AlInP in CH4/H2/Ar

Published online by Cambridge University Press:  10 February 2011

J. W. Lee ,
S. J. Pearton ,
C. J. Santana ,
E. S. Lambers ,
C. R. Abernathy ,
W. S. Hobson  and
F. Ren
J. W. Lee
Affiliation:
University of Florida, Gainesville FL 32611
S. J. Pearton
Affiliation:
University of Florida, Gainesville FL 32611
C. J. Santana
Affiliation:
University of Florida, Gainesville FL 32611
E. S. Lambers
Affiliation:
University of Florida, Gainesville FL 32611
C. R. Abernathy
Affiliation:
University of Florida, Gainesville FL 32611
W. S. Hobson
Affiliation:
AT&T Bell Laboratories, Murray Hill NJ 07974
F. Ren
Affiliation:
AT&T Bell Laboratories, Murray Hill NJ 07974
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Abstract

Electron Cyclotron Resonance (ECR) plasma etching with additional if-biasing produces etch rates ≥ 2,500Å/min for InGaP and AlInP in CH4/H2/Ar. These rates are an order of magnitude or much higher than for reactive ion etching conditions (RIE) carried out in the same reactor. N2 addition to CH4/H2/Ar can enhance the InGaP etch rates at low flow rates, while at higher concentrations it provides an etch-stop reaction. The InGaP and AtlnP etched under ECR conditions have somewhat rougher morphologies and different stoichiometries up to ˜200Å from the surface relative to the RIE samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 315
Copyright
Copyright © Materials Research Society 1996

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