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Double pendeo-epitaxial growth of GaN films with low density of threading dislocation

Published online by Cambridge University Press:  21 March 2011

Y. K. Hong ,
H. S. Jung ,
C-H. Hong ,
M.H. Kim  and
S-J. Leem
Y. K. Hong
Affiliation:
Dept. of Semiconductor Science and Technology & Semiconductor Physics Research Center, Chonbuk National University Duckjin-Dong, Duckjin-ku, Chonju 561-756, Korea
H. S. Jung
Affiliation:
Dept. of Semiconductor Science and Technology & Semiconductor Physics Research Center, Chonbuk National University Duckjin-Dong, Duckjin-ku, Chonju 561-756, Korea
C-H. Hong
Affiliation:
Dept. of Semiconductor Science and Technology & Semiconductor Physics Research Center, Chonbuk National University Duckjin-Dong, Duckjin-ku, Chonju 561-756, Korea
M.H. Kim
Affiliation:
OE Team, Device & Materials Laboratory LG Electronics Institute of Technology, Seoul 137-724, Korea
S-J. Leem
Affiliation:
OE Team, Device & Materials Laboratory LG Electronics Institute of Technology, Seoul 137-724, Korea
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Abstract

A double pendeo-epitaxy technique for growing uniformly GaN films with low defect density over the entire surface of a substrate has been achieved by metalorganic chemical vapor deposition(MOCVD). The structural properties of the first pendeo-epitaxial layers were optimized with the ratio of the lateral to the vertical growth rate, which is strongly affected by the growth temperature and the TMGa flow rate. The second pendeo-epitaxial growth was performed on the first regrown layers after removing a high defective region originating from underlying GaN seed layer. From the analysis of atomic force microscopy(AFM) images, the termination of surface steps by threading dislocations were not observed at the second regrown GaN layers. This result implies that a very low density of threading dislocation exists on the GaN surface. Cathodoluminescence(CL) results showed a strong band-edge emission from the all regrown regions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I3.21.1
Copyright
Copyright © Materials Research Society 2002

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