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Dose-Dependent “Activation Energy” For Blistering Phenomenon In Hydrogen-Implanted Silicon

Published online by Cambridge University Press:  10 February 2011

S. W. Bedell  and
W. A. Lanford
S. W. Bedell
Affiliation:
Department of Physics, State University of New York at Albany, Albany, NY 12222
W. A. Lanford
Affiliation:
Department of Physics, State University of New York at Albany, Albany, NY 12222
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Abstract

Silicon samples were implanted with 100 keV hydrogen at doses ranging from 4.9 to 9.9 × 1016 H/cm2. The samples were then annealed in an argon atmosphere using a special furnace mounted on a microscope stage. The time required to observe the onset of Si blistering was then measured as a function of temperature for the various hydrogen doses. An Arrhenius plot of the time-temperature data was made and an “activation energy” was calculated for each dose. The measured activation energies range from 2.6 to 1.1 eV corresponding to 4.9 to 9.9 × 1016 H/cm2, respectively. A qualitative explanation of the dose dependence is given in terms of a stressinduced lowering of the Si-Si bond energy. The hydrogen distribution as a function of annealing temperature was monitored using the 1H(15N,αγ)12C nuclear reaction. The results from the hydrogen profiling indicate that the hydrogen profile flattens at 500°C and concentrates at 550 °C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 513: Symposium H – Hydrogen in Semiconductors and Metals , 1998 , 369
Copyright
Copyright © Materials Research Society 1998

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References

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