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Doping properties of the Ion-Beam-Sputtered SiGe Film

Published online by Cambridge University Press:  10 February 2011

Wen-Jie Qi ,
Zhi-Sheng Wang ,
Zhi-Guang Gu ,
Guo-Ping Ru ,
Guo-Bao Jialig  and
Bing-Zong Li
Wen-Jie Qi
Affiliation:
Department of Electronic Engineering, Fudan University, Shanghai 200433, China Paul K. Chu Material Research Center, City University of Hong Kong, Hong Kong
Zhi-Sheng Wang
Affiliation:
Department of Electronic Engineering, Fudan University, Shanghai 200433, China Paul K. Chu Material Research Center, City University of Hong Kong, Hong Kong
Zhi-Guang Gu
Affiliation:
Department of Electronic Engineering, Fudan University, Shanghai 200433, China Paul K. Chu Material Research Center, City University of Hong Kong, Hong Kong
Guo-Ping Ru
Affiliation:
Department of Electronic Engineering, Fudan University, Shanghai 200433, China Paul K. Chu Material Research Center, City University of Hong Kong, Hong Kong
Guo-Bao Jialig
Affiliation:
Department of Electronic Engineering, Fudan University, Shanghai 200433, China Paul K. Chu Material Research Center, City University of Hong Kong, Hong Kong
Bing-Zong Li
Affiliation:
Department of Electronic Engineering, Fudan University, Shanghai 200433, China Paul K. Chu Material Research Center, City University of Hong Kong, Hong Kong
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Abstract

The ion-beam-sputtered polycrystalline SiGe film and its doping properties have been studied. Boron and phosphorus have been doped into the sputtered poly-SiGe film by ion implantation and diffusion. To activate the implanted impurities, both rapid thermal annealing and fiirnace annealing have been used. The electrical measurements show that boron and plhosphorus can be doped into sputtered SiGe films and effectively activated by both ion implantation with post-annealing and diffiision. Hall mobilities as high as 31 cm2/V-s and 20 cm2/V.s have been obtained in B-difflhsed and P-diffused SiGe films, respectively. The x-ray diffraction spectra of the sputtered Sifie filhn show its typical polycrystalline structure with (111), (220) and (311) as the preferential orientations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 289
Copyright
Copyright © Materials Research Society 1997

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References

1. See, for example, Harame, D., Larson, L., Case, M., Kovacic, S., Voinigescu, S., Tewksbury, T., Nguyen-Ngoc, D., Stein, K., Cressler, J., Jeng, S. -J., Malinowski, J., Groves, R., Eld, E., Sunderland, D., Rensch, D., Gilbert, M., Schonenberg, K., AhIgren, D., Rosenhaum., S., Glenn, J. and Meyerson, B., Int. Electron Devices Meet., Techn. Dig., 731 (1995).Google Scholar
2. See, for example, Ismail, K., Int. Electron Devices Meet., Techn. Dig., 509 (1995).Google Scholar
3. See, for example, Zhou, G. L. and Morkoc, H., Thin Solid Films 231, 125 (1993).Google Scholar
4. King, T. -J. and Saraswat, K. C., Int. Electron Devices Meet., Techn. Dig., 567 (1991).Google Scholar
5. Meyer, F., Schwebel, C., Pellet, C., Gautherin, G., Buxbaum, A., Eizenberg, M. and Raizman, A., Thin Solid Films 184, 117 (1990).Google Scholar