Hostname: page-component-848d4c4894-pjpqr Total loading time: 0 Render date: 2024-06-22T01:49:24.581Z Has data issue: false hasContentIssue false
  • English
  • Français

Doping Dependence of Local Hydrogen Motion in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  01 January 1993

P. Hari ,
P.C. Taylor  and
R.A. Street
P. Hari
Affiliation:
Department of Physics, University of Utah, Salt Lake City UT 84112
P.C. Taylor
Affiliation:
Department of Physics, University of Utah, Salt Lake City UT 84112
R.A. Street
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd, Palo Alto CA 94304
Get access

Abstract

1H NMR dipolar echo measurements have been performed on a series of samples of phosphorus- and boron-doped a-Si:H. The dipolar echo sequence consists of three rf pulses followed by an echo in the form: (π/2)x - τ1 - (π /4)y - π2- (π /4)y - echo. The echo height is plotted against π2 and the slope yields the dipolar spin-lattice relaxation time (T1D). T1D is a measure of fluctuations in the local dipolar field surrounding each hydrogen atom in a-Si:H, and measurement of this quantity can be employed as a probe of hydrogen motion on a microscopic scale. The T1D measurements of 10-5 B-doped, 10-3 P-doped and undoped a-Si:H are compared to the previously measured T1D of 10-4 B-doped a-Si:H. The T1D values for 10-4B-doped, 10-4 B-doped and undoped a-Si:H are, respectively, 1.7 ms, 11 ms and 22 ms at 300 K. The T1D for 10-3 P-doped is found to be the same as for 10-5 B-doped within experimental error. These trends are similar to the variation of the macroscopic diffusion of hydrogen with respect to various doping levels, but the details of the local motion are very different from those of the macroscopic diffusion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 297
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hari, P., Taylor, P.C. and Street, R.A., Amorphous Silicon Technology - 1992, Thompson, M.J., Hamakawa, Y., LeComber, P.G., Madan, A. and Schiff, E.A., eds. (Materials Research Society, Pittsburgh, 1992), Vol. 258, p. 293.Google Scholar
2. Street, R.A., Tsai, C.C., Kakalios, J. and Jackson, W.B., Philos. Mag. B56, 305 (1987).Google Scholar
3.D.E. Calson and C.W. Magee, Appl. Phys. Lett. 33, 81 (1978).Google Scholar
4. Jeener, J. and Broekaert, P., Phys Rev. 157, 232 (1967).Google Scholar