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Dopant Site Location in Dual-Implanted Gap using {111} Planar Channeling

Published online by Cambridge University Press:  25 February 2011

N.R. Parikh ,
C.T. Kao ,
D.R. Lee ,
J. Muse ,
M. L. Swanson ,
T.E. Haynes ,
R. Venkatasubramanian  and
M. Timmons
N.R. Parikh
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599-3255
C.T. Kao
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599-3255
D.R. Lee
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599-3255
J. Muse
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599-3255
M. L. Swanson
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599-3255
T.E. Haynes
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831-6048
R. Venkatasubramanian
Affiliation:
Center for Semiconductor Research, Research Triangle Institute, Research Triangle Park, NC 27099
M. Timmons
Affiliation:
Center for Semiconductor Research, Research Triangle Institute, Research Triangle Park, NC 27099
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Abstract

Previous studies have indicated that dual implantation can efficiently introduce group IV dopant onto selected sub-lattice sites in m-V compound semiconductors, thus enhancing electrical activation. We studied this phenomenon in GaP using Rutherford Backscattering Spectroscopy (RBS) to determine the lattice location of Sn atoms. We used single crystals of GaP (100) which had been implanted at 400° C with120 Sn+ following previously implanted69 Ga+ or 31P+. Energies were selected for euivalent projected ranges, and all species were implanted with doses of 1 × 1015 atoms/cm2 . Asymmetry in the angular scan of the {111} planar channel was then used to determine the sub-lattice location of the implanted Sn. RBS results indicated that for all implants Sn atoms were substituting Ga and P sites eually. However, Hall effect measurements gave p type conduction for GaP implanted with Sn alone, while those with prior implants of Ga or P resulted in n-type conduction. RBS and Hall effect results are explained by a vacancy complex model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 671
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1 Gemmel, D.S., Rev. Mod. Phys. 46, 129 (1974).Google Scholar
2 Feldman, L.C., Mayer, J.W. and Picraux, S.T., Materials Analysis by Ion Channeling (Academic Press, New York, 1982).Google Scholar
3 Bontemps, A., Fontenille, J. and Guivarch, A., Phys. Lett. A55. 373 (1976).Google Scholar
4 Andersen, J.U., Chechenin, N.G. and Zhang, Z.H., Nucl. Instr. Methods 39, 758 (1981).Google Scholar
5 Andersen, J.U., Chechenin, N.G. and Zhang, Z.H., Nucl. Instr. Methods 124, 129 (1982).Google Scholar
6 Andersen, J.U., Chechenin, N.G., Timoshnikov, Yu.A. and Zhang, Z.H., Rad. Effects 83, 91 (1984).Google Scholar
7 Swanson, M.L., Parikh, N.R., Sandhu, G.S., Frey, E.C., Zhang, Z.H., and Chu, W.K., Proceedings of MRS Symposium W, Fall 1988.Google Scholar
8 Heckingbottom, H. and Abridge, T., Rad. Effects 12, 31 (1973).Google Scholar
9 Adachi, S., Appl. Phys. Lett. 51, 1161 (1987).Google Scholar
10 Earn Shim, Tae and Itoh, Tadatsugu, J. Appl. Phys. 65, 486 (1989).Google Scholar