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Dopant Diffusion From Ion- Implanted Tasi2

Published online by Cambridge University Press:  28 February 2011

H. Gierishch ,
F. Neppl ,
E. Frenzel ,
P. Eichinger  and
K. Hieber
H. Gierishch
Affiliation:
Siemens AG, Central Research and Development, Microelectronics, Otto-Hahn- Ring 6, D-8000 Munich 83, FRG
F. Neppl
Affiliation:
Siemens AG, Central Research and Development, Microelectronics, Otto-Hahn- Ring 6, D-8000 Munich 83, FRG
E. Frenzel
Affiliation:
Fraunhofer-Institut für Festkörpertechnologie (IFT), Paul-Gerhard Allee 42, D-8000 Munich 60, FRG
P. Eichinger
Affiliation:
Fraunhofer-Institut für Festkörpertechnologie (IFT), Paul-Gerhard Allee 42, D-8000 Munich 60, FRG
K. Hieber
Affiliation:
Siemens AG, Central Research and Development, Microelectronics, Otto-Hahn- Ring 6, D-8000 Munich 83, FRG
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Abstract

A SIMS analysis of As-, B- and P- diffusion across the TaSi2/si interface into mono- Si was carried out together with an electrical characterization of the resulting structures. In the temperature range 900°C T 1000°C all three types of dopants readily diffused into Si without drastic segregation effects when appropriate interface cleaning was applied. This implies a variety of applications. In particular, very shallow diffusion regions were obtained in the mono Si underneath the implanted Tasi2 for As as well as for B and P, even at relatively long annealing times sometimes needed for subsequent process steps.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 183
Copyright
Copyright © Materials Research Society 1986

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References

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