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Donor Creation During Oxygen Implanted Buried Oxide Formation

Published online by Cambridge University Press:  28 February 2011

M. Delfino  and
P.K. Chu
M. Delfino
Affiliation:
Philips Research Laboratories Sunnyvale, Signetics Corp., Sunnyvale, CA 94088
P.K. Chu
Affiliation:
Charles Evans and Associates, San Mateo, CA 94402
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Abstract

Enhanced electron conductivity is observed in silicon that has been implanted with oxygen ions to form a buried oxide layer. The conductivity is attributed to donors that are created in the silicon both above and below the oxide. Secondary ion mass spectrometry and Rutherford backscattering spectroscopy show that, during subsequent annealing, oxygen accumulates only in the silicon surface. This causes the donors in the silicon surface to be easily activated to high concentrations and, unlike donors beneath the oxide, to be extremely resistant to thermal annihilation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 245
Copyright
Copyright © Materials Research Society 1986

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References

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