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Does The 1.25 eV Luminescence of Coherently Strained InGaAs Insertions in GaAs Originate from Quantum Dots?

Published online by Cambridge University Press:  10 February 2011

J.-L. Lazzari ,
R. Klann ,
A. Mazuelas ,
A. Trampert ,
M. Wassermeier ,
O. Brandt  and
K. H. Ploog
J.-L. Lazzari
Affiliation:
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, D- 10117 Berlin, Germany
R. Klann
Affiliation:
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, D- 10117 Berlin, Germany
A. Mazuelas
Affiliation:
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, D- 10117 Berlin, Germany
A. Trampert
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany
M. Wassermeier
Affiliation:
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, D- 10117 Berlin, Germany
O. Brandt
Affiliation:
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, D- 10117 Berlin, Germany
K. H. Ploog
Affiliation:
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, D- 10117 Berlin, Germany
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Abstract

We study the growth of InAs/AlxGa1-xAs/GaAs heterostructures as well as their structural and optical properties. Structurally coherent InAs islands with a narrow size distribution are found to be formed only in a very narrow range of InAs coverage. In striking contrast, the photoluminescence band in the 1.15–1.35 eV spectral range, which is commonly attributed to the emission from InAs quantum dots, is present for all of our structures, regardless the presence or absence of InAs islands and their strain state. Moreover, for constant InAs coverage this PL band follows not the Γ gap but the L gap of the AlxGa1-xAs barrier. This latter result is in disagreement with effective mass calculations for three-dimensionally confined excitons.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 417: Symposium EE – Optoelectronic Materials-Ordering, Composition Modulation, and Self-Assembled … , 1995 , 199
Copyright
Copyright © Materials Research Society 1996

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