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A Dodson-Tsao Relaxation Approach to The Crystallographic Tilting In (100) Heteroepitaxial Systems

Published online by Cambridge University Press:  15 February 2011

Ferenc Riesz
Ferenc Riesz*
Affiliation:
Research Institute for Technical Physics of the Hungarian Academy of Sciences, P. O. Box 76, H-1325 Budapest, Hungary, E-mail: H7883Rie@huella.bitnet
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Abstract

The tilt of epilayer lattice planes in (100) zinc blende lattice-mismatched heterostructures is calculated numerically using the Dodson-Tsao plastic relaxation model. Tilt is calculated as a function of growth temperature, initial defect density and substrate miscut angle. The results are explained by looking at the time evolution of the excess stresses of the opposing slip systems during strain relaxation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 97
Copyright
Copyright © Materials Research Society 1995

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References

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