Hostname: page-component-8448b6f56d-42gr6 Total loading time: 0 Render date: 2024-04-24T22:39:02.345Z Has data issue: false hasContentIssue false
  • English
  • Français

Do You Really Expect To Grow Epilayers On That? A Rationale For Growing Epilayers On Roughened Surfaces

Published online by Cambridge University Press:  01 February 2011

Joseph John Sumakeris ,
Brett A. Hull ,
Michael J. O'Loughlin ,
S. Ha ,
Marek Skowronski ,
John W. Palmour  and
Calvin H. Carter Jr.
Joseph John Sumakeris
Affiliation:
joe_sumakeris@cree.com, Cree, AD Epi, 4600 Silicon Dr., Durham, NC, 27703, United States, 9193135333, 9193135696
Brett A. Hull
Affiliation:
Brett_Hull@cree.com, Cree, Inc., 4600 Silicon Dr., Durham, NC, 27703, United States
Michael J. O'Loughlin
Affiliation:
Mike_O'Loughlin@cree.com, Cree, Inc., 4600 Silicon Dr., Durham, NC, 27703, United States
S. Ha
Affiliation:
seoyong@andrew.cmu.edu, Carnegie Mellon University, Materials Science and Engineering, 5000 Forbes Ave., Pittsburgh, PA, 15213, United States
Marek Skowronski
Affiliation:
ms3s@andrew.cmu.edu, Carnegie Mellon University, Materials Science and Engineering, 5000 Forbes Ave., Pittsburgh, PA, 15213, United States
John W. Palmour
Affiliation:
John_Palmour@cree.com, Cree, Inc., 4600 Silicon Dr., Durham, NC, 27703, United States
Calvin H. Carter Jr.
Affiliation:
Calvin_Carter@cree.com, Cree, Inc., 4600 Silicon Dr., Durham, NC, 27703, United States
Get access

Abstract

We describe surface preparation and epilayer growth techniques that readily reduce the density of Vf drift inducing basal plane dislocations in epilayers to less than 10 cm-2 and permit the fabrication of bipolar SiC devices with very good Vf stability. The optimal process route requires etching the substrate surface prior to epilayer growth to enhance the natural conversion of basal plane dislocations into threading edge dislocations during epilayer growth. The surface of this relatively rough “conversion” epilayer is subsequently repolished prior to growing the device structure. We provide details on processing parameters and potential problems as well as describe devices produced using this low basal plane dislocation growth processes.

Keywords

dislocationsdefectschemical vapor deposition (CVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B03-06
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Bergman, J.P., Lendenmann, H., Nilsson, P.A., Lindefelt, U. and Skytt, P., Mater. Sci. Forum Vol. 353–356 (2001), p. 299.Google Scholar
2 Stahlbush, R.E., Twigg, M.E., Irvine, K.G., Sumakeris, J.J., Chow, T.P., Losee, P.A., Zhu, L., Tang, Y. and Wang, W., Mater. Sci. Forum Vol. 457–460 (2004) p. 533.Google Scholar
3 Skowronski, M. and Ha, S., J. Appl. Phys. 99, 011101 (2006).Google Scholar
4 Sumakeris, J.J., Bergman, J.P., Das, M.K., Hallin, C., Hull, B.A., Janzén, E., Lendenmann, H., O'Loughlin, M.J., Paisley, M.J., Ha, S., Skowronski, M., Palmour, J. W. and Carter, C.H. Jr., Presented at ICSCRM, 2005, Pittsburgh, PA Google Scholar
5 Tsuchida, H., Miyanagi, T., Kamata, I., Nakamura, T., Izumi, K., Nakayama, K., Ishii, R., Asano, K. and Sugawara, Y., Mater. Sci. Forum Vol. 483–485 (2005) p. 97. Google Scholar
6 Sumakeris, J.J.: U.S. Patent 7,018,554, issued March 28, 2006, filed Sept. 22, 2003.Google Scholar
7 Sumakeris, J.J., Jenny, J.R. and Powell, A.R., Mater. Res. Soc. Bulletin, Vol. 30 (2005) p. 280.Google Scholar
8 Zhang, Z. and Sudarshan, T.S., Appl. Phys. Lett. 87, 151913 (2005).Google Scholar
9 Paisley, M., Sumakeris, J. and Kordina, O., U.S Patent # 6,569,250 B2 (2003).Google Scholar