Hostname: page-component-848d4c4894-xm8r8 Total loading time: 0 Render date: 2024-06-27T12:24:34.720Z Has data issue: false hasContentIssue false
  • English
  • Français

Divinylmercury as a Precursor in the Metalorganic Molecular Beam Epitaxy of Hg Containing II-VI Materials

Published online by Cambridge University Press:  22 February 2011

J. J. Zinck  and
D. Rajavel
J. J. Zinck
Affiliation:
Hughes Research Laboratories, Malibu, California
D. Rajavel
Affiliation:
Hughes Research Laboratories, Malibu, California
Get access

Abstract

We have used x-ray photoelectron spectroscopy, temperature programmed desorption, and epitaxial growth experiments to study the feasibility of using divinylmercury (DVHg) as a precursor for metalorganic molecular beam epitaxial (MOMBE) growth of Hg-containing II-VI materials. The surface chemistry associated with the interaction of DVHg and Te was investigated using polycrystalline Te (poly-Te) films as the substrates for DVHg adsorption. nDVHg dissociatively adsorbed on a poly-Te surface at temperatures as low as -118°C. However, the DVHg dissociation probability was temperature dependent and substantially less than unity when extrapolated to typical Hg1−xCdx Te growth temperatures of 150–200°C. Preliminary results from MOMBE growth experiments showed that successful MOMBE growth of HgTe on CdTe//ZnTe//GaAs using DVHg and thermally precracked diethyltellurium was only possible when the DVHg was also thermally precracked. Simultaneous exposure of atomic H and DVHg to a poly-Te surface significantly enhanced the dissociative adsorption of DVHg, indicating that the presence of atomic H in the growth environment may be an effective alternative to precracking DVHg for MOMBE growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 57
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Scribner, D.A., Kruer, M.R., and Killiany, J.M., Proc. IEEE 79, 66 (1991).Google Scholar
2. Faurie, J. P., Million, A., Boch, R., and Tissot, J. L., J. Vac. Sci. Technol. A1, 1593 (1983).Google Scholar
3. Schwartz, J. P., Tung, Tse, and Brebrick, R. F., J. Electrochem. Soc. 128, 438 (1981).Google Scholar
4. Tutt, L. W. in Physical Properties of II-VI Organometallic Source Materials. Hughes monograph, unpublished.Google Scholar
5. Zinck, J. J., Brewer, P. D., and Olson, G. L. in Chemical Perspectives of Microelectronic Materials II, edited by Interrante, L.V., Jensen, K.F., Dubois, L.H., and Gross, M.E. (Mater. Res. Soc. Symp. 204, Pittsburgh PA, 1991) pp. 243–250.Google Scholar
6. Rajavel, D. and Zinck, J. J., Appl. Phys. Lett. 61, 1534 (1992).Google Scholar
7. Langmuir, I., J. Am. Chem. Soc. 34, 1310 (1912).Google Scholar
8. Smith, J. N. Jr, and Fite, W. L., J. Chem. Phys. 37, 898 (1962).Google Scholar
9. Blum, N. A. and Feldman, Charles, Solid State Comm. 15, 965 (1974).Google Scholar
10. Arias, J. and Singh, J., Appl. Phys. Lett. 55, 1561 (1989).Google Scholar
11. Singh, J. and Arias, J., J. Vac. Sci. Technol. A7, 2562 (1989).Google Scholar
12. Outka, D. A., Surface Sci. Lett. 235, L311 (1990).Google Scholar
13. Redhead, P. A., Vacuum 12, 203 (1962).Google Scholar
14. Chen, A.-B., Sher, A., and Spicer, W.E., J. Vac. Sci. Technol. A1, 1674 (1983).Google Scholar
15. Feldman, R.D., Austin, R.F., and Dayem, A.H., Appl. Phys. Lett. 49, 797 (1986).Google Scholar
16. Coronado, C.A., Ho, E., and Kolodziejski, L.A., Appl. Phys. Lett. 61, 534 (1992).Google Scholar
17. Watanabe, A., Hata, M., and Isu, T., J. Crystal Growth 111, 554 (1991).Google Scholar
18. Suemune, I., Kazuhiko, K., Koui, T., Kishimoto, A., and Yamanishi, M., Jap. J.App. Phys. 9A, 2047 (1991).Google Scholar
19. Benson, S.W. in The Foundations of Chemical Kinetics. (McGraw-Hill, New York, 1960) p. 347 Google Scholar
20. Brewer, P.D., private communication.Google Scholar