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Divacancy Annealing in Silicon Monitored by Differential Calorimetry and Infrared Absorption Spectroscopy

Published online by Cambridge University Press:  22 February 2011

Sjoerd Roorda
Sjoerd Roorda*
Affiliation:
Groupe de recherche en physique et technology de Couches Minces (GCM) and Département de physique, Université de Montréal, Montréal Québec H3C 3J7 Canada.
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Abstract

Annealing of divacancies in crystalline Si has been characterized by differential scanning and isothermal calorimetry and infrared absorption spectroscopy. Si discs of 0.1 mm thickness have been implanted with 3.4 MeV protons. Scanning calorimetry shows a relatively sharp peak centered around 425 K and a broader feature ranging from 450 to 620 K. The isothermal heat release at 620 K exhibits a single exponential rather than a bimolecular decay. As the annealing progresses, a decrease in infrared absorption at 1.8 µm is observed which is directly related to the annealing of divacancies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 159
Copyright
Copyright © Materials Research Society 1994

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References

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