Hostname: page-component-848d4c4894-5nwft Total loading time: 0 Render date: 2024-06-11T06:39:38.986Z Has data issue: false hasContentIssue false
  • English
  • Français

Dissociation of Deuterium-Defect Complexes in Ion-Implanted Epitaxial 4H-SiC

Published online by Cambridge University Press:  10 February 2011

M. Janson ,
M. K. Linnarsson ,
A. Hallén  and
B. G. Svensson
M. Janson
Affiliation:
Royal Institute of Technology, Solid State Electronics, P.O. Box E229, S-164 40 Kista-Stockholm, Sweden
M. K. Linnarsson
Affiliation:
Royal Institute of Technology, Solid State Electronics, P.O. Box E229, S-164 40 Kista-Stockholm, Sweden
A. Hallén
Affiliation:
Royal Institute of Technology, Solid State Electronics, P.O. Box E229, S-164 40 Kista-Stockholm, Sweden
B. G. Svensson
Affiliation:
Royal Institute of Technology, Solid State Electronics, P.O. Box E229, S-164 40 Kista-Stockholm, Sweden
Get access

Abstract

Epitaxial layers of low doped 4H-SiC are implanted with 20 keV 2H+ ions to a dose of 1×1015 cm−2. The samples are subsequently annealed at temperatures ranging from 1040 to 1135 °C. Secondary ion mass spectrometry is used to obtain the concentration versus depth profiles of the atomic deuterium in the samples. It is found that the concentration of implanted deuterium decreases rapidly in the samples as a function of anneal time.

The experimental data are explained by a model where the deuterium migrates rapidly and becomes trapped and de-trapped at implantation-induced defects which exhibit a slightly shallower depth distribution than the implanted deuterium ions. Computer simulations using this model, in which the damage profile is taken from Monte Carlo simulations and the surface is treated as a perfect sink for the diffusing deuterium atoms, are performed with good results compared to the experimental data. The complexes are tentatively identified as carbon-deuterium at a Si-vacancy and a dissociation energy (ED) of approximately 4.9 eV is extracted for the deuterium-vacancy complexes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 513: Symposium H – Hydrogen in Semiconductors and Metals , 1998 , 439
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Choyke, W. J., in MRS Bulletin; Vol.22 (1997), p. 25–29.Google Scholar
2 Moore, K. and Trew, R. J., in MRS Bulletin; Vol.22 (1997), p. 50–56.Google Scholar
3 Schdner, A., Rottner, K., Nordell, N., Linnarsson, M. K., Peppermuiller, C., and Helbig, R., Diamond and Related Materials 6, 1293–1296 (1997).Google Scholar
4 Pearton, S. J., Corbett, J. W., and Shi, T. S., Applied Physics A, 153–195 (1987).Google Scholar
5 Gendron, F., Porter, L. M., Porte, C., and Bringuier, E., Applied Physics Letter 67, 1253–1255 (1995).Google Scholar
6 Linnarsson, M. K., Doyle, J. P., and Svensson, B. G., Mat.Res.Soc.Symp. 423, 635–630 (1996).Google Scholar
7 Wait, T. R., Journal of Chemical Physics 28, 103–106 (1958).Google Scholar
8 Biersack, J. P. and Haggmark, L. G., Nuclear Instruments and Methods, 257–269 (1980).Google Scholar
9 McHargue, C. J. and Williams, J. M., Nuclear Instruments and Methods in Physics Research, 889–894 (1993).Google Scholar
10 Barklie, R. C., Collins, M., Holm, B., Pacaud, Y., and Scorupa, W., Journal of Electronic Materials 26, 137–143 (1996).Google Scholar
11 Anwand, W., Brauer, G., Coleman, P. G., and Scorupa, W., in Characterisation of vacancytype defects in ion implanted and annealed SiC by positron annihilation spectroscopy, 1997.Google Scholar
12 Janson, M., Diploma Thesis, KTH, Royal Institute of Technology, 1998.Google Scholar
13 Patrick, L. and Choyke, W.J., Physical Review B 8, 1660–1669 (1973).Google Scholar