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Displacement Charge Patterns and Ferroelectric Domain Wall Dynamics Studied by In-Situ Tem

Published online by Cambridge University Press:  10 February 2011

A. Krishnan
Affiliation:
NEC Research Institute, Inc. 4 Independence Way, Princeton, NJ 08540
M. M. J. Treacy
Affiliation:
NEC Research Institute, Inc. 4 Independence Way, Princeton, NJ 08540
M. E. Bisher
Affiliation:
NEC Research Institute, Inc. 4 Independence Way, Princeton, NJ 08540
P. Chandra
Affiliation:
NEC Research Institute, Inc. 4 Independence Way, Princeton, NJ 08540
P. B. Littlewood
Affiliation:
Cavendish Laboratory, Cambridge University, Cambridge, UK
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Abstract

We have observed the growth of domains in ferroelectric barium titanate and potassium niobate using a transmission electron microscope. When domains move in response to electric fields we see a scaling effect where the fine scale domain structure is activated first, followed by larger length-scale patterns. Curvature and tilting of domain walls leads to local uncompensated displacement charge and external fields can interact with these charged walls. In this paper, we posit that the presence of displacement charge on domain walls is important for polarization switching. Charge-neutral domain configurations are in a lower energy state and are harder to switch. We argue that the number of charge-neutral, low energy domain configurations can increase with time. This mechanism provides an intrinsic contribution to ferroelectric fatigue.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

1. Scott, J. F., Ferroelectrics Review, 1 129 (1998).Google Scholar
2. Warren, W. L., Dimos, D., Tuttle, B. A., Pike, G. E., Schwartz, R. W., Clews, P. J., and McIntyre, D., J. Appl. Phys., 77 6695 (1995).Google Scholar
3. Scott, J. F. and de Araujo, C. A. P., Science, 246 1400 (1989).Google Scholar
4. Krishnan, A., Bisher, M. E., and Treacy, M. M. J., MRS Symp. Proc., 541 475480 (1998).Google Scholar
5. Remeika, J. P., J. Am. Chem. Soc., 76 940 (1954).Google Scholar
6. Tanaka, M. and Goro, H., Journal of the Physical Society of Japan, 19 954970 (1964).Google Scholar
7. Krishnan, A., Treacy, M. M. J., Bisher, M. E., Chandra, P., and Littlewood, P. B., submitted.Google Scholar