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Discrete Steps in the Capacitance-Voltage Characteristics of GaInN/GaN Light Emitting Diode Structures

Published online by Cambridge University Press:  01 February 2011

Y. Xia ,
E. Williams ,
Y. Park ,
I. Yilmaz ,
J.M. Shah ,
E.F. Schubert  and
C. Wetzel
Y. Xia
Affiliation:
Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A. Future Chips Constellation, Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A.
E. Williams
Affiliation:
Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A. Future Chips Constellation, Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A.
Y. Park
Affiliation:
Future Chips Constellation, Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A. Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A.
I. Yilmaz
Affiliation:
Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A. Future Chips Constellation, Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A.
J.M. Shah
Affiliation:
Future Chips Constellation, Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A. Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A.
E.F. Schubert
Affiliation:
Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A. Future Chips Constellation, Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A. Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A.
C. Wetzel
Affiliation:
Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A. Future Chips Constellation, Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A.
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Abstract

A detailed modeling of the electronic bandstructure of GaInN alloys and GaInN/GaN heterostructures typically used for high efficiency light emitting diodes is of high relevance for future improvements. Here we are exploring opportunities to accurately quantify the carrier dynamics under forward and reverse voltage bias. In GaInN/GaN LED-type heterostructures we observe distinct steps in the junction capacitance as a function of bias voltage within the depletion regime. Up to three individual steps can be identified that correspond to alternating ranges of capacitive and resistive impedances. Our analysis suggests that we are quantitatively monitoring the electron concentration in each individual quantum well. The pronounced clarity of the data reveals a high level of epitaxial perfection and spatial homogeneity across the entire area of the junction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E3.38
Copyright
Copyright © Materials Research Society 2005

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References

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