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Directed self-assembly lithography for half-pitch sub-15 nm pattern fabrication process

Published online by Cambridge University Press:  08 April 2015

Hironobu Sato ,
Yuriko Seino ,
Naoko Kihara ,
Yusuke Kasahara ,
Katsutoshi Kobayashi ,
Katsuyoshi Kodera ,
Hideki Kanai ,
Yoshiaki Kawamonzen ,
Shinya Minegishi  and
Ken Miyagi
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Hironobu Sato*
Affiliation:
EUVL Infrastructure Development Center, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Yuriko Seino
Affiliation:
EUVL Infrastructure Development Center, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Naoko Kihara
Affiliation:
EUVL Infrastructure Development Center, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Yusuke Kasahara
Affiliation:
EUVL Infrastructure Development Center, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Katsutoshi Kobayashi
Affiliation:
EUVL Infrastructure Development Center, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Katsuyoshi Kodera
Affiliation:
EUVL Infrastructure Development Center, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Hideki Kanai
Affiliation:
EUVL Infrastructure Development Center, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Yoshiaki Kawamonzen
Affiliation:
EUVL Infrastructure Development Center, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Shinya Minegishi
Affiliation:
EUVL Infrastructure Development Center, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Ken Miyagi
Affiliation:
EUVL Infrastructure Development Center, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Toshikatsu Tobana
Affiliation:
EUVL Infrastructure Development Center, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Noriyuki Hirayanagi
Affiliation:
EUVL Infrastructure Development Center, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Tomoharu Fujiwara
Affiliation:
EUVL Infrastructure Development Center, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Tsukasa Azuma
Affiliation:
EUVL Infrastructure Development Center, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Teruaki Hayakawa
Affiliation:
Tokyo Institute of Technology, 2-12-1-S8-26 Ookayama, Meguro, Tokyo 152-8552, Japan
*
*Corresponding author: hironobu.sato@eidec.co.jp
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Abstract

This paper introduces a fabrication method to achieve sub-15 nm line-and-space (L/S) patterns by combining grapho- and chemo-epitaxy using poly(styrene-block-methyl methacrylate) copolymer (PS-b-PMMA). The fabrication method is simple, since it eliminates photoresist stripping and also does not require any special materials to form pinning patterns. In this process, the ridges formed on spin-on-glass (SOG) surface work as physical guides and the photoresists on them are utilized as a pinning layer. Fine PS-b-PMMA L/S patterns were obtained in sufficient critical dimension (CD) range of the guide patterns that corresponded to the 15% dose margin using ArF immersion lithography. 3-dimensional grid defects were found to be the origin of the short defects. The half-pitch (hp) 15 nm L/S patterns were transferred successfully to SOG/spin-on-carbon (SOC) stacked substrate.

We also describe fabrication of sub-10 nm L/S patterns using a high-chi block copolymer (BCP).

Keywords

self-assemblylithography (removal)nanoscale
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1750: Symposium KK – Directed Self-Assembly for Nanopatterning , 2015 , mrsf14-1750-kk06-04
Copyright
Copyright © Materials Research Society 2015 

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References

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