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Direct Silicidation of Co on Si by Rapid Thermal Annealing
Published online by Cambridge University Press: 26 February 2011
Abstract
Rapid thermal annealing is used to form cobalt silicide directly on unimplanted as well as B, As, and P implanted wafers. The films are characterized by sheet resistance, X-ray diffraction, SEM, SIMS, and contact resistance measurements. The direct silicidation of cobalt on Si by rapid thermal annealing yields smooth, low resistivity films with minimal dopant redistribution.
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- Research Article
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- Copyright © Materials Research Society 1986
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