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Direct Optical Measurement of the valence band offset of p+ Si1−x−yGexCy/p− Si (100) by Heterojunction Internal Photoemission

Published online by Cambridge University Press:  10 February 2011

C. L. Chang ,
L. P. Rokhinson  and
J. C. Sturm
C. L. Chang
Affiliation:
Department of Electrical Engineering, Center for Photonics and Optoelectronic Materials, Princeton University, Princeton, NJ 08544USA, cichang@eee.princeton.edu
L. P. Rokhinson
Affiliation:
Department of Electrical Engineering, Center for Photonics and Optoelectronic Materials, Princeton University, Princeton, NJ 08544USA, cichang@eee.princeton.edu
J. C. Sturm
Affiliation:
Department of Electrical Engineering, Center for Photonics and Optoelectronic Materials, Princeton University, Princeton, NJ 08544USA, cichang@eee.princeton.edu
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Abstract

Optical absorption measurements have been performed to study the effect of carbon on the valence band offset of compressively strained p+ Si1−x−yGexCy/(100) p− Si heterojunction internal photoemission structures grown by Rapid Thermal Chemical Vapor Deposition (RTCVD) with substitutional carbon levels up to 2.5%. Results indicated that carbon decreased the valence band offset by 26 ± 1 meV/ %C. Results from optical measurement in this study agreed with previous data from capacitance-voltage measurements. Based on previous reports of carbon effect on the bandgap of compressively strained Si1−x−yGexCy, our work suggests that the effect of carbon incorporation on the band alignment of Si1−x−yGexCy/Si is to reduce the valence band offset, with a negligible effect on the conduction band alignment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 533: Symposium FF – Epitaxy & Applications of Si-Based Heterostructures , 1998 , 245
Copyright
Copyright © Materials Research Society 1998

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