Hostname: page-component-76fb5796d-wq484 Total loading time: 0 Render date: 2024-04-26T21:28:14.079Z Has data issue: false hasContentIssue false
  • English
  • Français

Diluent Gas Effects on Properties of Ain and GaN Thin Films Grown by Metalorganic Vapor Phase Epitaxy on α(6H)-SiC Substrates

Published online by Cambridge University Press:  10 February 2011

Andrew Hanser ,
Colin Wolden ,
William Perry ,
Tsvetanka Zheleva ,
Eric Carlson ,
Philip Hartlieb  and
Robert F. Davis
Andrew Hanser
Affiliation:
Drew_Hanser@ncsu.edu
Colin Wolden
Affiliation:
Department of Chemical Engineering, Colorado School of Mines, Golden, CO, 80401
William Perry
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
Tsvetanka Zheleva
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
Eric Carlson
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
Philip Hartlieb
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
Robert F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
Get access

Abstract

Thin films of AIN and GaN were deposited on α(6H)-SiC(0001) wafers using metalorganic vapor phase epitaxy (MOVPE) and H2 and N2 diluents. A computational fluid dynamic model of the deposition process was used to analyze the film growth conditions for both diluents. Low temperature (12 K) photoluminescence of the GaN films grown in N2 had peak intensities and full widths at half maximum of ∼7 meV which were equal to or better than those films grown in H2. Cross-sectional and plan-view transmission electron microscopy of films grown in both diluents showed similar microstructures with a typical dislocation density of 109/cm2. Hall measurements of n-type (Si doped) GaN grown in N2 revealed Hall mobilities equivalent to those films grown in H2. Acceptor-type behavior of Mg-doped GaN grown in N2 was repeatably obtained without post-growth annealing. Secondary ion mass spectrometry revealed equivalent levels of H in Mg-doped GaN films grown in both diluents.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 149
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Nakamura, S., Senoh, M., Iwasa, N., Nagahama, S., Jpn. J. Appl. Phys. 34, L797 (1995).Google Scholar
2. Nakamura, S., 2nd Internat. Conf. on Nitride Semicond. Tokushima, Japan, Oct. 25–31, 1997.Google Scholar
3. Wu, Y.-F., Keller, S., Kozodoy, P., Keller, B. P., Parikh, P., Kapolnek, D., Denbaars, S. P., Mishra, U. K., IEEE Electron. Dev. Lett. 18, 290 (1997).Google Scholar
4. Aktas, O., Fan, Z. F., Botchkarev, A., Mohammad, S. N., Roth, M., Jenkins, T., Kehias, L., Morkoq, H., IEEE Electron. Dev. Lett. 18, 293 (1997).Google Scholar
5. Houtman, C., Graves, D. B., Jensen, K. F., J. Electrochem Soc., 133, 961 (1986).Google Scholar
6. Evans, G., Grief, R., Trans. ASME, 109, 928, (1987).Google Scholar
7. Piner, E. L., Behbehani, M. K., El-Masry, N. A., McIntosh, F. G., Roberts., J. C. Boutros, K. C., Bedair, S. M., Appl. Phys. Lett. 70, (4) 461.Google Scholar
8. Jenkinson, J. P., Pollard, R., J. Electrochem. Soc. 131, 2911, (1984).Google Scholar
9. Kee, R. J., Rupley, F. M., Miller, J. A., Sandia National Laboratories Report SAND87–8215, (1994).Google Scholar
10. Kee, R. J., Dixon-Lewis, G., Wamatz, J., Coltrin, M. E., Miller, J. A., Sandia National Laboratories Report SAND86–8246, (1995).Google Scholar
11. Wilke, C. R., J. Chem. Phys. 18, 517 (1950).Google Scholar
12. Hanser, A. D., Wolden, C. A., Perry, W. G., Zheleva, T., Carlson, E. P., Banks, A. D., Therrien, R. J., Davis, R. F., submitted to J. Electron. Mater.Google Scholar
13. Dingle, R., Sell, D. D., Stokowski, S. E., Ilegems, M., Phys. Rev. B 4 1211 (1971).Google Scholar
14. Nakamura, S., Iwasa, N., Senho, M., Mukai, T., Jpn. J. Appl. Phys., 31 1258 (1992).Google Scholar
15. Götz, W., Johnson, N. M., Walker, J., Bour, D. P., Appl. Phys. Lett., 67 2666 (1995).Google Scholar