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Diffusion of Ion-Implanted Tin in Gallium Arsenide

Published online by Cambridge University Press:  25 February 2011

E.L. Allen ,
M.D. Deal  and
J.D. Plummer
E.L. Allen
Affiliation:
Department of Materials Science and Engineering, Stanford University
M.D. Deal
Affiliation:
Integrated Circuits Laboratory, Stanford University, Stanford, CA 94305.
J.D. Plummer
Affiliation:
Integrated Circuits Laboratory, Stanford University, Stanford, CA 94305.
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Abstract

The diffusion of ion-implanted tin in gallium arsenide was investigated as a function of temperature, dose and background doping. The chemical depth profiles were determined using SIMS and the carrier profiles were determined by CV Etch Profiling. The data was fit using a numerical process simulator, SUPREM 3.5. Sn diffusivity was found to depend on the square of the electron concentration. Sn and Ge were found to have relatively high diffusivities when implanted, while Si diffused very little.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 685
Copyright
Copyright © Materials Research Society 1990

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References

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