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Diffusion of Boron in Germanium and Si1-xGex (x>50%) alloys Suresh Uppal

Published online by Cambridge University Press:  01 February 2011

A.F.W. Willoughby ,
J.M. Bonar ,
N.E.B. Cowern ,
R.J.H. Morris  and
M. Bollani
A.F.W. Willoughby
Affiliation:
Materials Research Group, School of Engineering Sciences, University of Southampton, Southampton, SO17 1BJ, United Kingdom
J.M. Bonar
Affiliation:
Department of Electronics and Computer Science, University of Southampton, Southampton, SO17 1BJ, United Kingdom
N.E.B. Cowern
Affiliation:
Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, Surrey, United Kingdom
R.J.H. Morris
Affiliation:
Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, Surrey, United Kingdom
M. Bollani
Affiliation:
Physics Department, University of Warwick, Coventry, CV4 7AL, United Kingdom dINFM and L-NESS, via Anzani 52, 22100 Como, Italy
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Abstract

Boron diffusion in germanium and relaxed Si1-xGex alloys with Ge content x>50% is reported. Relaxed SiGe layers were grown by LEPECVD and boron was introduced using ion implantation. Samples were given equal thermal budgets using furnace annealing. Diffusivity values of boron have been extracted. The results confirm that diffusion of boron in germanium is indeed slower than that reported in literature. The diffusivity of boron was found to increase gradually for x>50% at 900°C but the increase is not substantial. We found that pairing model is not sufficient to explain boron diffusivity behavior in SiGe alloys over the entire range of germanium content. The results suggest that an interstitial mediation of boron diffusion in germanium should be considered.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 765: Symposium D – CMOS Front-End Materials and Process Technology , 2003 , D6.16
Copyright
Copyright © Materials Research Society 2003

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