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Diffusion of Boron from Polysilicon at High Concentrations

Published online by Cambridge University Press:  21 February 2011

R. F. Lever ,
B. Garben ,
C. M. Hsieh  and
W. A. Orr Arienzo
R. F. Lever
Affiliation:
IBM General Technology Division, East Fishkill Facility, Hopewell Junction, NY 12533
B. Garben
Affiliation:
BM Deutschland Boeblingen, Germany
C. M. Hsieh
Affiliation:
IBM General Technology Division, East Fishkill Facility, Hopewell Junction, NY 12533
W. A. Orr Arienzo
Affiliation:
IBM General Technology Division, East Fishkill Facility, Hopewell Junction, NY 12533
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Abstract

Boron diffusion profiles in single crystal silicon from highly doped polysilicon sources have been measured using SIMS after diffusion at 950°C for various times. These data have been analyzed to determine D(c) of boron in the single crystal. It is ncrmally assumed that at high boron concentrations D increases linearly with concentration. However, the shape of these profiles indicates that for a polysilicon source, this behavior does not appear to hold. Using Bolzmann-Matano analysis, D(c) was found to be insensitive to boron concentrations above 3.0E19 atoms/cm3. The results of this analysis were confirmed by using them as input to a diffusion simulation computer program and excellent agreement with the experimental profiles was obtained. The value of D was found to be unusually high at all concentrations in the single crystal and increased almost linearly with the doping level of the polysilicon. The effect of the furnace ramp-down cycle on the profiles near the crystal surface have also been investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 36: Symposium C – Impurity Diffusion and Gettering in Silicon , 1984 , 95
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

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