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Diffusion Modeling of the Redistribution of Ion Implanted Impurities

Published online by Cambridge University Press:  26 February 2011

Alwin E. Michel
Alwin E. Michel*
Affiliation:
IBM Research Center,Yorktown Heights, New York 10598
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Abstract

Transient enhanced diffusion during rapid thermal processing has been reported for most of the common dopants employed for silicon device fabrication. For arsenic a large amount of the available data is fit by a computational model based on accepted diffusion mechanisms. Ion implanted boron on the other hand exhibits anomalous tails and transient motiou. A time dependence of this displacement is demonstrated at lower temperatures. High temperature rapid anneals are shown to reduce some of the anomalous motion observed for low temperature furnace anneals. A model is described that links the electrical activation with the diffusion and describes both the transient diffusion of rapid thermal processing and the large anomalous diffusion reported many years ago for furnace anneals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 52: Symposium B – Rapid Thermal Processing , 1985 , 3
Copyright
Copyright © Materials Research Society 1986

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