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Diffusion Characteristics of Vacancies in Aluminum Interconnects.

Published online by Cambridge University Press:  01 January 1992

A. S. Nandedkar*
Affiliation:
Technology Modeling Department, IBM, East Fishkill Laboratory, Z/47C, Hopewell Junction, NY 12533, USA.
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Abstract

Computer simulations were performed to investigate the migration energy of vacancies in A1 in the presence of grain boundary, dislocation and various imposed forces (such as stress gradients and electro-migration). The energy values were significantly smaller when the vacancy moved into the grain boundary or a dislocation core than in opposite direction. This makes these defects sinks for vacancies from which they are unlikely to migrate out. The major time required for the movement of vacancies is thus limited to within a single grain. Calculations of migration time from the center of the grain to the grain boundary gives time needed for void formation. Calculations of this time assuming an electrical potential gradient along the metal line gave estimates consistent with experimental observations. The increased values of migration energy under compressive stresses suggest that void formation could be deterred by applying such stresses.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

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