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Diffusion Characteristics of Cu in TiN Thin Films

Published online by Cambridge University Press:  15 March 2011

Abhishek Gupta ,
Hiyan Wang ,
Alex V. Kvit ,
Gerd Duscher  and
Jay Narayan
Abhishek Gupta
Affiliation:
NSF Center for Advanced Materials and Smart Structures Department of Materials science and Engineering, NCSU, Raleigh, NC
Hiyan Wang
Affiliation:
NSF Center for Advanced Materials and Smart Structures Department of Materials science and Engineering, NCSU, Raleigh, NC
Alex V. Kvit
Affiliation:
NSF Center for Advanced Materials and Smart Structures Department of Materials science and Engineering, NCSU, Raleigh, NC
Gerd Duscher
Affiliation:
NSF Center for Advanced Materials and Smart Structures Department of Materials science and Engineering, NCSU, Raleigh, NC
Jay Narayan
Affiliation:
NSF Center for Advanced Materials and Smart Structures Department of Materials science and Engineering, NCSU, Raleigh, NC
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Abstract

We have investigated the diffusion characteristics of Cu in nanocrystalline, polycrystalline and single crystal TiN thin films, which are being used as a diffusion barrier for sub-quarter-micron metallization. These films were synthesized on Si (100) substrate by first ablating TiN and then ablating Cu targets using Pulse Laser Deposition technique. The three different microstructures of TiN were achieved by growing the films at different substrate temperatures, where higher temperatures (650 °C) leads to epitaxy. Then a uniform thin layer of Cu was deposited on TiN/Si substrate at room temperature for all the three depositions above. These structures were characterized using X-Ray diffraction technique and high-resolution transmission electron microscopy. Each sample is then annealed at 500 °C for 30min to study the diffusion barrier characteristics as a function of microstructure of TiN. Study of diffusion profile and Cu concentration measurement were performed using Scanning Transmission Electron Microscopy-Z contrast Imaging (0.12nm resolution), Electron Energy Loss Spectroscopy and Secondary Ion Mass Spectroscopy. From the results obtained the effect of microstructure of TiN thin films on the diffusion characteristics of Cu after annealing was analyzed. Four points probe resistivity measurements were made to establish structure property correlations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 686: Symposium A – Materials Issues in Novel Si-Based Technology , 2001 , A9.8
Copyright
Copyright © Materials Research Society 2002

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References

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