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Dielectric-tuned Diamondlike Carbon Materials for High-performance Self-aligned Graphene-channel Field Effect Transistors

Published online by Cambridge University Press:  21 May 2012

Susumu Takabayashi ,
Meng Yang ,
Shuichi Ogawa ,
Yuji Takakuwa ,
Tetsuya Suemitsu  and
Taiichi Otsuji
Susumu Takabayashi
Affiliation:
Research Institute of Electrical Communication (RIEC), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan JST-CREST, K’s Olancho Bldg., 7 Olancho, Chiyoda-ku, Tokyo 102-0076, Japan
Meng Yang
Affiliation:
Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
Shuichi Ogawa
Affiliation:
Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
Yuji Takakuwa
Affiliation:
Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
Tetsuya Suemitsu
Affiliation:
Research Institute of Electrical Communication (RIEC), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan JST-CREST, K’s Olancho Bldg., 7 Olancho, Chiyoda-ku, Tokyo 102-0076, Japan
Taiichi Otsuji
Affiliation:
Research Institute of Electrical Communication (RIEC), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan JST-CREST, K’s Olancho Bldg., 7 Olancho, Chiyoda-ku, Tokyo 102-0076, Japan
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Abstract

The ‘DLC-GFET’, a graphene field effect transistor with a diamondlike carbon (DLC) top-gate dielectric film, is presented. The DLC film was formed ‘directly’ onto the graphene channel without forming passivation interlayers using our original photoemission-assisted plasma-enhanced chemical vapor deposition (PA-CVD), where the plasma was precisely controlled by photoemission from the sample with quite low electric power to minimize plasma damage to the channel. The DLC-GFET exhibits clear ambipolar characteristics with a slightly positive shift of the neutral points (Dirac voltages). Relatively high transconductances were obtained as 14.6 (8.8) mS/mm in the n (p) channel modes, respectively, with a thick gate dielectric of 48 nm and a long gate length of 5 μm, promising vertical scaling-down to improve the high-frequency performance. The positive shift of the Dirac voltage is due to unintentional hole doping from oxygen species in the DLC film into the graphene channel, promising a minute modulation doped structure with oxygen to overcome high resistance in the access region. Hence, a DLC film deposited by PA-CVD is a candidate for the gate dielectric on graphene.

Keywords

diamonddielectric propertieselectronic material
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1451: Symposium DD/EE – Nanocarbon Materials and Devices , 2012 , pp. 185 - 190
Copyright
Copyright © Materials Research Society 2012

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References

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