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Dielectric Function and Defect Structure of CdTe Implanted by 350-keV Bi Ions

Published online by Cambridge University Press:  21 March 2011

Peter Petrik ,
Miklós Fried ,
Zsolt Zolnai ,
Nguyen Q. Khánh ,
Jian Li ,
Robert W. Collins  and
Tivadar Lohner
Peter Petrik
Affiliation:
Research Institute for Technical Physics and Materials Science, H-1525 Budapest, POB 49, Hungary
Miklós Fried
Affiliation:
Research Institute for Technical Physics and Materials Science, H-1525 Budapest, POB 49, Hungary
Zsolt Zolnai
Affiliation:
Research Institute for Technical Physics and Materials Science, H-1525 Budapest, POB 49, Hungary
Nguyen Q. Khánh
Affiliation:
Research Institute for Technical Physics and Materials Science, H-1525 Budapest, POB 49, Hungary
Jian Li
Affiliation:
Department of Physics and Astronomy, University of Toledo, Toledo, OH 43606, USA
Robert W. Collins
Affiliation:
Department of Physics and Astronomy, University of Toledo, Toledo, OH 43606, USA
Tivadar Lohner
Affiliation:
Research Institute for Technical Physics and Materials Science, H-1525 Budapest, POB 49, Hungary
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Abstract

In this work we have developed optical models for the ellipsometric characterization of Bi-implanted CdTe. We have characterized the amount and nature of disorder using Rutherford Backscattering Spectrometry combined with channeling (RBS/C). Samples with a systematically varying degree of disorder were prepared using ion implantation of Bi into single-crystalline CdTe at an energy of 350 keV with increasing doses from 3.75×1013 cm-2 to 6×1014 cm−2. The motivation for use of the high atomic mass Bi ions was that previous studies using lighter ions revealed damage at a low level, even for doses several times higher than the amorphization threshold estimated by simulation [P. Petrik et al., phys. stat. sol. (c) 5, 1358 (2008)]. In contrast, Bi ions create sufficient disorder for investigation of the changes in dielectric function critical point (CP) features in a wider variety of structures from single-crystalline to the disordered state. The CP features can be described by numerous methods starting from the standard CP model, through the parameterization of Adachi [Adachi et al., J. Appl. Phys. 74, 3435 (1993)], and finally to the generalized CP models. The standard CP model has been demonstrated to be a reliable approach for polycrystalline CdTe characterization used in photovoltaic applications [Li et al., phys. stat. sol. (a) 205, 901 (2008)].

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1123: Symposium P – Photovoltaic Materials and Manufacturing Issues , 2008 , 1123-P05-01
Copyright
Copyright © Materials Research Society 2009

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References

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