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Dielectric Fracture Leading to Metallic Connections by Laser Heating

Published online by Cambridge University Press:  21 February 2011

J. B. Bernstein
J. B. Bernstein*
Affiliation:
MIT Lincoln Laboratory, 244 Wood Street, Lexington MA 02173
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Abstract

Laser programmed connections between adjacent lines on the same level of metallization have been developed as a means to achieve high density linking for customization in programmable gate arrays and for additive redundancy in restructurable integrated circuits. The resistances of the connections were approximately 1Ω and the overlaying passivation remained in tact. Links were formed by focusing a pulsed laser between two adjacent lines of metal, one of which was connected to a lower level of metal through a contact via. The mechanism of link formation appears to be a fissure contained within planarized passivation due to the stress of thermal expansion of the metallization with molten aluminum filling the crack.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 356: Symposium B2 – Thin Films: Stresses and Mechanical Properties V , 1994 , 833
Copyright
Copyright © Materials Research Society 1995

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References

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