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A Diamond Silicon Heterojunction Diode

Published online by Cambridge University Press:  26 February 2011

C. L. Ellison ,
R. M. Cohen  and
J. T. Hoggins
C. L. Ellison
Affiliation:
Norton Company, 2532 South 3270 West, Salt Lake City, Utah 84119
R. M. Cohen
Affiliation:
Materials Science and Engineering Department, University of Utah, Salt Lake City 84112
J. T. Hoggins
Affiliation:
Norton Company, 2532 South 3270 West, Salt Lake City, Utah 84119
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Abstract

Thin diamond films were grown on low resistivity p-type Si wafers by microwave plasma assisted chemical vapor deposition. Using gold contacts, diode-like behavior was observed and forward bias current densities in excess of 5 A/cm2 were obtained. Reverse bias current densities were as low as 5 mA/cm2. Photocurrent was measured when photon energies larger than the Si bandgap were used to illuminate the heterojunction. The same photocurrent spectrum was measured even when the illumination spot was moved several centimeters away from the metal-diamond contact. Photovoltage. photocurrent and hot probe measurements have been used to infer the energy band diagram of the diamond-Si p-p heterojunction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 371
Copyright
Copyright © Materials Research Society 1990

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References

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