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Device Degradation on a Full-Frame CCD Image Sensor with a Transparent Gate Electrode

Published online by Cambridge University Press:  03 September 2012

Biay-Cheng Hseih ,
S. Kosman ,
Y.C. Lo ,
K. Jayakar ,
M. Mehra ,
P. Roselle  and
W. C. Chang
Biay-Cheng Hseih
Affiliation:
Microelectronics Technology Division, Eastman Kodak Company, Rochester, NY 14650- 2019
S. Kosman
Affiliation:
Microelectronics Technology Division, Eastman Kodak Company, Rochester, NY 14650- 2019
Y.C. Lo
Affiliation:
Microelectronics Technology Division, Eastman Kodak Company, Rochester, NY 14650- 2019
K. Jayakar
Affiliation:
Microelectronics Technology Division, Eastman Kodak Company, Rochester, NY 14650- 2019
M. Mehra
Affiliation:
Microelectronics Technology Division, Eastman Kodak Company, Rochester, NY 14650- 2019
P. Roselle
Affiliation:
Microelectronics Technology Division, Eastman Kodak Company, Rochester, NY 14650- 2019
W. C. Chang
Affiliation:
Microelectronics Technology Division, Eastman Kodak Company, Rochester, NY 14650- 2019
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Abstract

The electrical and optical properties of Indium-Tin-Oxide (ITO) films, deposited by radio frequency (r.f.) magnetron sputtering, were studied. ITO films, when deposited using optimum sputtering conditions, were reproducibly prepared with resistivity as low as 1.5 × 10−4 Ω-cm and optical transmissivity higher than 80% over the wavelength range of interest. Device stability when ITO is used as a replacement for polysilicon as a gate electrode in silicon charge-coupled device (CCD) image sensors was also studied. After an anneal process at 950 °C in N2 the device degraded. The degradation can be attributed to the generation of oxide charge and interface states in the ITO/SiO2/Si system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 803
Copyright
Copyright © Materials Research Society 1992

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References

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