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Deviation of the mechanical response of Wall-patterned (001) GaAs Surface: a central-plastic-zone criterion

Published online by Cambridge University Press:  26 February 2011

Eric Le Bourhis  and
G. Patriarche
Eric Le Bourhis
Affiliation:
eric.le.bourhis@univ-poitiers.fr, Univ. Poitiers, LMP-CNRS 6630, Av. P.&M. Curie, Futuroscope-Chasseneuil, N/A, 86960, France, 33 5 49 49 67 58, 33 5 49 49 66 92
G. Patriarche
Affiliation:
gilles.patriarche@lpn.cnrs.fr, CNRS, LPN UPR20, France
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Abstract

Wall-patterned GaAs surfaces have been elaborated by photolithography and dry etching. Different surfaces were produced in order to change the aspect ratio of the walls formed at the substrate surface. The mechanical behaviour of individual walls was investigated by nanoindentation and the responses were compared to that of a standard bulk reference (flat surface). Deviation from the bulk response is detected in a load range of 0.1-25 mN depending on the aspect ratio of the walls. A central-plastic-zone criterion is proposed in view of TEM images of indented walls and allows predicting the response deviation of a given wall knowing its width. The application of substrate patterning for optoelectronic devices is proposed in the perspective of eliminating residual dislocations appearing in mismatched structures.

Keywords

III-Vdislocationstransmission electron microscopy (TEM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 904: Symposium BB – Mechanisms of Mechanical Deformation in Brittle Materials , 2005 , 0904-BB05-09
Copyright
Copyright © Materials Research Society 2006

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References

1 Patriarche, G., Le Bourhis, E., Phil. Mag. A 80, 2899 (2000).Google Scholar
2 Le Bourhis, E., Patriarche, G., Prog Cryst Growth and Charac Mater. 47, 1 (2003).Google Scholar
3 Johnson, K.L. KL in: Contact Mechanics, Cambridge University Press 1985.Google Scholar
4 Choi, Y., Suresh, S., Scripta Mater., 48, 249 (2003).Google Scholar
5 Choi, Y., Van Vliet, K.J., Lu, J.,. Suresh, S., J. Appl. Phys. 94, 6050 (2003).Google Scholar
6 Largeau, L., Patriarche, G., Le Bourhis, E., Rivière, A., Rivière, J.P., Phil. Mag. 83, 1653 (2003).Google Scholar
7 Largeau, L., Patriarche, G., Rivière, A., Rivière, J.P., Le Bourhis, E., J. Mater. Sci., 39, 943 (2004).Google Scholar
8 Uchic, M.D., Dimiduk, D.M., Florando, J.N., Nix, W.D., Science, 305, 986 (2004).Google Scholar
9 Hall, E.O., Proc. Phys. Soc. London B, 64, 747 (1951).Google Scholar
10 Petch, N.J., J. Iron Steel Inst., 174, 25 (1953).Google Scholar
11 Patriarche, G., Largeau, L., Rivière, J.P., Le Bourhis, E., Phil. Mag., 84, 3281 (2004).Google Scholar
12 Oliver, W.C., Pharr, G.M., J. Mater. Res., 7, 1564 (1992).Google Scholar
13 Bradby, J.E., Williams, J.S., Wong-Leung, J., Kucheyev, S.O., Swain, M.S., Munroe, P., Phil Mag A 82, 1931 (2002).Google Scholar
14 Harvey, S., Huang, H., Venkataraman, S., Gerberich, W.W., J. Mater. Res., 8, 1291 (1993).Google Scholar
15 Kramer, D., Huang, H., Kriese, M., Robach, J., Nelson, J., Wright, A., Bahr, D., Gerberich, W.W., Acta Mater., 47, 333 (1999).Google Scholar
16 Le Bourhis, E., Patriarche, G., Phil. Mag. Lett., 79, 805 (1999).Google Scholar