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Development of Pseudomorphic Structure in Ge Films Deposited on Si(100) at Low Temperatures

Published online by Cambridge University Press:  25 February 2011

P. F. Lyman ,
S. Thevuthasan ,
M. W. Grant ,
J. H. Hoogenraad  and
L. E. Seiberling
P. F. Lyman
Affiliation:
Physics Department, University of Pennsylvania, Philadelphia, Pennsylvania 19104 Physics Department, University of Florida, Gainesville, FL 32611
S. Thevuthasan
Affiliation:
Physics Department, University of Florida, Gainesville, Florida 32611 Chemistry Dept., University of Hawaii, Honolulu, HI 96822.
M. W. Grant
Affiliation:
Physics Department, University of Florida, Gainesville, Florida 32611
J. H. Hoogenraad
Affiliation:
Physics Department, University of Florida, Gainesville, Florida 32611
L. E. Seiberling
Affiliation:
Physics Department, University of Florida, Gainesville, Florida 32611
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Abstract

We have studied the structure of 1 to 10 monolayer (ML) Ge films grown at room temperature on Si(100)–(2 × 1). Using transmission ion channeling spectroscopy, we have uncovered the first evidence for pseudomorphic structure in these films, contradicting the widely–held belief of amorphous growth at temperatures below 500 K. A model is proposed in which pseudomorphic domains constitute roughly half of the Ge films up to a critical thickness (∼4 ML), after which strain is relieved through defect introduction. Several of the films grown at room temperature were subsequently annealed for 20 min. at fixed temperatures ranging from 450 K to 790 K. A marked improvement in the epitaxial quality of the films is observed upon annealing that is consistent with growth proceeding from existing pseudomorphic domains.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 549
Copyright
Copyright © Materials Research Society 1991

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References

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